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It was interesting to learn that CIGS semiconductor is catalyzing breakthroughs in advanced image sensors for digital cameras.
According to The Nikkei Business Daily (Tuesday, Feb 5 ’08 edition) National Institute of Advanced Industrial Science and Technology and Rohm Co. have jointly developed a new image sensor by fabricating a thin film of copper indium gallium di-selenide (CIGS) above the silicon substrate. The inventors were able to overcome the current leakage problem associated with CIGS. This sensor is more than six times as sensitive as a conventional silicon-based device and is also capable of detecting light across a broader spectrum, from visible light to near infrared light (up to a wavelength of 1,300 nanometers). 90% of the surface of this sensor is capable of detecting light which is triple the normal amount.
According to Nikkei “this combination of features can boost the shutter speed of digital cameras and provide the kind of nighttime vision useable for monitoring cameras and car-mounted safety systems”.
Image: www.tribcsp.com
John Moran:
Will this result in solar cells capturing a broader band of the electromagnetic spectrum and thus more efficient cells? Price per watt? Panels under a $1/watt? When? Low degradation? Better performance at higher temperatures? What are the implications?
Fezan Sayed:
Indeed, this is an interesting development. Your hypothesis is correct, heterojunction designs typically result in higher efficiencies. There are unique challenges related to the manufacturability and durability of heterojunction cells. Sanyo has succesfully manufactured a heterojuction configuration of a-Si and Crystalline Silicon with >20% efficiency.
AC Adapter SONY AC-L200 HC42 HC32 HC21 HC1000:
Excellent site!