LED MOCVD Precursors
Metal-organic chemical vapor deposition (MOCVD) is the method of choice for depositing In- and Ga-containing layers in compound semiconductor applications. While MOCVD has a long history of creating GaAs-based devices, in recent years, light-emitting diodes (LEDs) have grown rapidly in importance. In LEDs, the choice of material depends on the wavelength desired, and most semiconductor materials contain Ga or In, and other elements (for example red LEDs contain AlGaAs, green LEDs contain AlGaInP, blue LEDs contain InGaN).
The precursor materials used for In and Ga are tri-methyls of In or Ga, i.e., TMI (tri-methyl-indium) and TMG (tri-methyl-gallium). The starting materials for manufacturing these high-purity metal-organic precursor materials are indium trichloride and gallium trichloride, respectively.
Indium Corporation manufactures both indium trichloride and gallium trichloride for these markets.
LED MOCVD Precursors Technical Documents
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Indium Corporation Blog Posts
The Professor leads an informative discussion on the future of portable electronics.
In a previous blog I spoke about Large Ground Plane Voiding in Electronics Assembly and referred to a statistical tool called an Ishikawa Diagram. This tool helps map out a process and provide an excellent visual aid that helps show the potential defect causes and the effects the process variables can have. This particular Ishikawa Diagram displayed that reflow profile can have a large effect on voiding. Today I will dig into this area a bit further and talk about how we can minimize large ground plane solder voiding in electronic assemblywith differences in reflow profile.
Learn about the many factors associated with BTC voiding reduction.
Product Manager of Compounds
From One Engineer to Another®
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