White Papers

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Papers about sputtering target

• A Room Temperature, Low-Stress Bonding Process to Reduce the Impact of Use Stress on a Sputtering Target Assembly

  by Amanda Hartnett, Jacques Matteau, Ronnie Spraker, Omar Knio

  As semiconductor processing has moved to 300mm wafers, the size of deposition targets, including tungsten, tantalum, and molybdenum has grown, and process complexity has increased as well. This added size and complexity contributes to the stress on a target assembly during the physical vapor deposition (PVD) process, and the target assembly’s ability to withstand this stress has a large effect on the resulting deposition rates, yields, and film properties. One of the major sources of stress is the coefficient of thermal expansion (CTE) mismatch between metal targets in semiconductor processes, such as tungsten (CTE of 4.5*10-6/°C), tantalum (6.5*10-6/°C), and molybdenum (5.1*10-6/°C) compared with their backing plates, which are typically made of aluminum (23*10-6/°C), brass (21.2*10-6/°C), or copper-chrome (17.6*10- 6/°C). Standard soldering and solid state joining processes have difficulty controlling stress produced by the CTE-mismatch. We will demonstrate how the NanoBond® process can be used to control stresses during the bonding and deposition processes. Modeling will be conducted to compare standard bonding processes to the NanoBond process, accounting for CTE mismatches.

  SVC Tech Con 2011, NanoFoil, NanoBond, sputtering target, CTE mismatch

  [Permanent Link to this Paper]

  Posted on 19 Apr 2011

• Low-Melting Metallic Sputtering Targets Bonded At Room Temperature (Ambient)

  by Thomas Acchione, Jim Hisert

  Solar PV cell and module manufacturers are looking for new and improved assembly materials and process enhancements to increase throughput, reduce cost, and improve cell efficiency. To reach these (dynamic) higher goals for thin film deposition, new materials and cost-effective processes are needed. Depositing the target material directly onto the backing plate is typically used when conventional target bonding is simply not possible because of the low-melting point range of materials. When using the low melting alloys or single elements in thin film cells (CIG, CuGa, In, and InSn), it is possible to use a localized heat source to bond them at room temperature. This paper discusses:

  1) the casting of these low-melting alloy sputtering targets, and
  2) the subsequent bonding of the alloys to a backing plate for use in existing equipment.

  In addition, the presentation will demonstrate the bonding of low-melting point metallic sputtering targets, as well as how to verify the performance of these targets during operation.

  solar, sputtering target, NanoFoil

  [Permanent Link to this Paper]

  Posted on 21 Jan 2011

• Stress-Free Bonding of Large Linear Sputtering Targets for LCD Displays

  by A. Duckham, H.B. Parker, T.J. Acchione, M.A. Curran, J.E. Newson, N.G. Piegari, D.M. Lunking, E.L. Walters, D.B. Deger

  A process for bonding stress free, flat assemblies of late generation Liquid Crystal Displays (LCD) sputtering targets using reactive multilayer foil as a localized heat source has been developed. This paper will demonstrate the capability of bonding targets to backing plates of sizes up to those typical of Generation (Gen) 10 and on material combinations with widely divergent Coefficients of Thermal Expansion (CTE).

  sputtering target, NanoFoil, NanoBond, LCD, target bonding

  [Permanent Link to this Paper]

  Posted on 10 Mar 2010

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