热蒸发和 PVD 涂层

Thermal evaporation and physical vapor deposition (PVD) are two techniques used to apply thin films and coatings to various substrates. The purity of the source material is just as crucial as the deposition equipment. Indium Corporation provides high-quality materials, particularly indium and gallium, specifically for the electronics and semiconductor industries. Plus, we offer experienced technical support to help you optimize your PVD process.

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概述

实现薄膜沉积的高质量和高效率

Thermal evaporation and PVD are both techniques for thin film deposition, each utilizing different methods. These processes are crucial across various industries, including electronics, automotive, and aerospace. To ensure effective and efficient thermal evaporation, high-purity metals and alloys are essential for achieving quality thin films. Indium Corporation is the preferred choice for customers, thanks to our advanced materials, unwavering commitment to quality, and outstanding technical support.

益处

Elevate Your Thin Film Deposition with Indium Corporation’s Premier Materials and Expertise

先进材料

我们以提供顶级金属、合金和化合物为荣，以确保薄膜沉积的卓越质量。

卓越的铟

铟及其化合物，特别是氧化铟锡（ITO），因其卓越的导电性和透明度，常用于显示器、触摸屏和太阳能电池。

高品质镓

镓是形成砷化镓（GaAs）的重要元素，砷化镓是一种以高效率将电能转化为光或射频信号而著称的半导体，因此在 LED 和射频技术中至关重要。

专用服务

我们与每位客户一起选择合适的材料，并提供我们在材料和工艺方面的专业知识，以确保无缝体验。

Materials and Available Forms

材料	圆形射击	泪滴镜头	大块	自定义表格	坩埚填充	定制坩埚插件
在	X	X		X	X	X
ITO			X
加	X				X
InGa	X	X		X	X

特点

热蒸发常用元素的物理性质

	铟	镓	铜	硒
原子序数	49	31	29	34
沸点	2,072°C	2,204°C	2,562°C	685°C
熔点	157°C	29.8°C	1,084°C	221°C
密度	7.31 克/立方厘米	6.10 克/立方厘米	8.94 克/立方厘米	4.28 – 4.81g/cm³
原子量	114.8 克/摩尔	69.7 克/摩尔	63.5 克/摩尔	789.6 克/摩尔

热蒸发常用合金的物理性质

	ITO	铜镓合金	Culn
熔点	1500°C	460°C	575°C
密度	7.16 克/立方厘米	7.91 克/立方厘米	8.45 克/立方厘米

热蒸发和 PVD 涂层产品

Indium Corporation provides high-quality indium and gallium metal, as well as compounds used in thermal evaporation and PVD to ensure precise application, contributing to improved device efficiency and functionality.