Shots provide a larger area-to-volume ratio for the metals and alloys that favor the interaction with external elements. Engineers using smaller melt pots will find using shot helpful when ingots would be too large to fit. Shots provide a better resolution in feed quantity. Shots help reduce scraps obtained after ingot filings.
Gallium is a crucial material for building compound semiconductor devices. To form epitaxial GaN layers chemical vapor deposition (CVD) techniques are typically used, and the CVD gallium precursor (trimethyl-gallium) is typically made from high purity gallium trichloride.
Gallium oxide is needed for sputtering targets that consist of indium, gallium, and zinc oxides. The IGZO or GIZO sputtering targets are used in next generation displays, where high currents and pixel densities make it necessary to use ever higher performing materials. The GIZO material offers the right properties to deposit high mobility active channels for the thin film transistors in the display’s active matrix backplane.
Gallium trichloride (GaCl3, gallium chloride) is the ideal precursor for gallium derivative compounds.
Thus, gallium trichloride is the starting material for gallium-based metal-organic precursors. Amongst these TMG (Tri-methyl gallium) is the most prominent choice for MOCVD deposition processes widely used in the compound semiconductor and LED industries.
Another important industrial use for gallium chloride is in the battery industry, specifically primary batteries that use a lithim thionyl chloride (LTC) battery chemistry. In these LTC batteries gallium chloride is the precursor material for the electrolyte salt (LiGaCl4).
Gallium chloride is a difficult material to handle ‐ it is very corrosive. The only acceptable packaging materials are hastelloy (a special, Ni based alloy) or borosilicate glass ‐ both very corrosion resistant. Since standard gallium trichloride is solid at room temperature it needs to be melted (MP~80°C) or dissolved using a chemical solvent.
Indium Corporation has developed a granulated form of gallium trichloride: EZ-Pour®. The gallium trichloride is pelletized without introducing any impurities into the material, and the finished product can easily be poured, e.g. while loading chemical reactors. Expensive hastelloy containers, and fittings to measure temperature, pressure, fill levels, etc. are not required.
EZ-Pour® is shipped in borosilicate glass containers with high-temperature rated PBT caps with a PTFE liner.
We supply gallium trichloride in solid and granulated form, and (typically) at 5N purity. To learn more about our gallium chloride offerings, contact us today. One of our dedicated engineers will be available to answer any questions.
"We found your EZ-Pour® so much easier to handle compared to what we got from other suppliers." Peter Dahl, University of Gothenburg, Sweden
Gallium oxide is the common term for gallium sesquioxide, or (Ga2O3). It is a white powder that consists of rod shaped crystals, with the β-phase being the dominant crystalline phase. The Ga2O3 rods agglomerate into larger, secondary particles.
Gallium oxide is used in phosphors, cathodes for solid oxide fuel cells, piezo-electric crystals, GGG crystals (gallium gadolinium garnets), and, most recently, in sputtering targets for GIZO or IGZO materials. These sputtering targets consist of gallium, indium, zinc, and oxide. GIZO or IGZO is the most attractive material for the flat panel component industry regarding emerging OLED displays, as it provides superior mobility for the thin film transistors that control the display pixels.
To learn more about our gallium oxide offerings and how it works in flat panel component manufacturing, solid oxide fuel cell production or piezo-electric crystals, get in touch with us today. Our dedicated staff of seasoned experts is excited to hear from you.
Gallium acetylacetonate (Ga(acac)3) is an organometallic coordination complex with gallium at the center surrounded by three acetylacetonate ligands.
When heated in the presence of oxygen, gallium acetylacetonate decomposes into gallium oxide (Ga2O3). This property makes Ga(acac)3 a useful precursor for growing highly pure and uniform Ga2O3 thin films on substrates like glass and silicon. Ga2O3 is gaining significant attention in recent years as an ultra-wide bandgap (~ 4.8 eV) semiconductor for use in power electronics.
Another direct application of this compound is the production of quantum dots. Ga(acac)3 can react with sulfur to synthesize gallium sulfide (Ga2S3) quantum dots through a process called One-pot synthesis. Ga2S3 quantum dots have a band gap of approximately 3.30 eV, making them suitable for blue color emission and for use in photonics and optoelectronics. Ga(acac)3 can also be used to prepare quantum dots of gallium arsenide (GaAs), gallium phosphide (GaP), and gallium indium phosphide (GaInP), which have potential applications in quantum photonics.
In certain processes involving high-temperature deposition, Ga(acac)3 can serve as a replacement for trimethyl gallium (TMG). Ga(acac)3 is more thermally stable and decomposes at higher temperatures compared to TMG. Additionally, Ga(acac)3 is not pyrophoric like TMG, making it safer to handle. The crystalline powder form of Ga(acac)3, as opposed to the liquid state of TMG, adds to the ease of handling.
Indium Corporation is a global supplier of high-quality and high-purity gallium acetylacetonate. The typical purity of our gallium acetylacetonate starts at 99.99%, and it can be further optimized according to your specific needs.
In addition to gallium acetylacetonate, Indium Corporation also offers other gallium compounds such as gallium trichloride (GaCl3) and gallium oxide (Ga2O3). These compounds serve various applications in electronics, optoelectronics, and materials science industries.
To learn more about our Gallium acetylacetonate, contact us today. One of our dedicated engineers will be available to answer any questions.