화합물 반도체

Compared to the traditional single-element silicon semiconductor, compound semiconductors are made from combinations of elements from different groups of the periodic table, such as Gallium Arsenide (GaAs), Gallium Nitrite (GaN), Indium Phosphide (InP), or Cadmium Telluride (CdTe). These materials are chosen for their unique properties, such as high electron mobility and direct bandgap, which are advantageous for applications in optoelectronics, high-frequency, and high-power devices.