Pressemitteilungen

CLINTON, N.Y., July 2, 2026 — Indium Corporation® Senior Applications Development Engineer, Engineered Solder Materials (ESM), Ryan Mayberry will present research on the use of thermal interface

CLINTON, N.Y., 3. Juni 2026 — Die Indium Corporation® und das Ames National Laboratory haben eine Forschungs- und Entwicklungspartnerschaft bekannt gegeben, um die Produktion von Gallium in den USA auszuweiten, einem kritischen Werkstoff, der verwendet wird

CLINTON, N.Y., 1. Juni 2026 — Leo Hu, Senior Area Technical Manager bei Indium Corporation®, wird erläutern, wie moderne thermische Schnittstellenmaterialien (TIMs) auf Metallbasis neue Leistungsgrenzen erreichen können in

CLINTON, N.Y., 29. Mai 2026 – Als Branchenführer im Bereich innovativer Materiallösungen für kritische HF-/Mikrowellenanwendungen wird die Indium Corporation® ihre hochzuverlässigen, goldbasierten

CLINTON, N.Y., May xx, 2026 – As a leading provider of high-reliability materials for all power electronics devices, Indium Corporation® will showcase its AI-enabling portfolio of products at PCIM

CLINTON, N.Y., May 26, 2026 — Indium Corporation®, a leading provider of high-reliability soldering, sintering, and thermal interface materials for power electronics devices, will feature three

CLINTON, N.Y., May 21, 2026 – As an industry leader in innovative materials solutions for semiconductor packaging and assembly, Indium Corporation® will showcase its high-reliability portfolio of

CLINTON, N.Y., 15. Mai 2026 — Leo Hu, Senior Area Technical Manager bei Indium Corporation®, wird erläutern, wie thermische Schnittstellenmaterialien (TIMs) auf Metallbasis das volle Leistungspotenzial von

CLINTON, N.Y., May 13, 2026 — Indium Corporation® Applications Development Engineer, Engineered Solder Materials (ESM), Kyle Aserian, will present research on the use of indium-based solder

CLINTON, N.Y., May 12, 2026 — As a leading materials provider for the advanced electronic packaging market, Indium Corporation® experts will share their technical insight and knowledge

CLINTON, N.Y., May 1, 2026 — As a leading provider of advanced materials solutions for today’s demanding AI applications, Indium Corporation® will feature its high-reliability product

CLINTON, N.Y., April 30, 2026 — As a leading provider of advanced materials solutions enabling today’s demanding AI applications, Indium Corporation® experts will share their technical

CLINTON, N.Y., April 27, 2026 — Indium Corporation today announced it has been awarded a $3.2 million grant by the

CLINTON, N.Y., April 23, 2026 — Indium Corporation® today announced that it has joined the Indian Design, Semiconductor, Packaging and Systems (IDSPS) program, a national initiative supporting

CLINTON, N.Y., April 14, 2026 — Indium Corporation® Senior Global Product Manager, Semiconductor and Advanced Materials, Sze Pei Lim will present a collaborative International Electronics

CLINTON, N.Y., April 6, 2026 — Indium Corporation®, a leading materials provider for the electronics assembly market, recently received Electronics Manufacturing (EM) Asia Innovation Awards for

CLINTON, N.Y., April 3, 2026 — Indium Corporation®, an industry leader in innovative materials solutions for semiconductor packaging and electronics assembly, announced that it has executed a

CLINTON, N.Y., March 31, 2026 – As a leading materials provider to the electric vehicle (EV) and e-mobility industries—addressing power module- and PCBA-level applications—Indium Corporation®

CLINTON, N.Y., March 23, 2026 — Indium Corporation® received a Circuits Assembly New Product Introduction (NPI) Award for Indium12.9HF, a halogen-free solder paste engineered for cost-effective,

CLINTON, N.Y., March 19, 2026 — As a proven leader in soldering materials and metal thermal interface materials (TIMs) solutions for future-forward technologies, Indium Corporation® will showcase

CLINTON, N.Y., March 19, 2026 — Indium Corporation® Senior Area Technical Manager Leo Hu will discuss how innovative interconnect materials can drive higher yields and reliability in semiconductor