Jim: What is the major advantage of using STEM instead of SEM for <90nm node structures?
Matt: While SEM is very capable of working in the <90nm regime, STEM is becoming popular. STEM offers a different image quality and contrast than traditional SEM. With STEM, it is possible to differentiate layers that could not be seen with the SEM. Traditional STEM has been done with a Transmission Electron Microscope (TEM), which can actually have sub-atomic resolution. However, today, in addition to traditional TEM techniques, one can obtain STEM results using an SEM based tool. With a sample prepared for STEM imaging (thin sample on the order of 100nm thick), an operator can obtain STEM data at 30KV or less from a traditional SEM instrument. While the SEM based STEM cannot provide sub-atomic resolution (like the TEM can), the technique is very useful and provides approximately 0.8nm resolution and excellent image quality and layer delineation. In addition,performing chemical analysis using energy dispersive spectral analysis (EDS)on a thin sample can improve the spatial resolution to 15-20 nm vs the 300- 500 nm achievable on bulk materials.
http://www.fei.com/products/families/helios-nanolab-family.aspx
Jim:有些實驗室空間不足，最小的 SEM 有多小？
Matt:我們的 SEM 已經變得非常小巧，可以放置在一些狹小的空間內。一般而言，傳統的 SEM 可能由一個控制台（桌子）組成，控制台可放置顯示器、鍵盤和滑鼠。旁邊可能是真空控制台，放置樣品和色柱。1-2 個機架中通常會包含一些周邊電子設備。所佔空間不需要比 2 張書桌的面積還大。不過，我們也意識到有些設施可能有嚴重的空間限制，因此我們設計了 TableTop SEM（稱為 FEI Phenom）。據說這個裝置看起來就像卡布奇諾咖啡機，可以放在桌上。該裝置所涉及的週邊設備只有一個非常小的幫浦和電源供應器。
http://www.fei.com/products/families/phenom.aspx
Jim:您建議使用什麼設備來測定回流焊後助焊劑殘留物的成分？
Matt:有一些關鍵的元素分析技術，例如 EDS 和 EELS，會非常有用。EDS 可以在 SEM 或 TEM 上進行，而 EELS 則是基於 TEM 的技術。兩者各有利弊。在助焊劑和製劑上一個有趣的應用是檢驗它們的橫斷面（使用 FEI Focused Ion Beam 或 DualBeam 進行橫斷面），然後用 EDS 分析來詢問橫斷面，以獲得定量或定量的成份資訊，當然在此過程中也會獲得高解析度的 SEM 影像，以顯示層的劃分和任何晶粒的對比。
Jim:是否有實驗室讓我們的客戶試用 FEI 設備？
Matt：絕對可以。我們有幾個不同的最先進的 NanoPorts（或稱示範實驗室），可以隨時展示我們的設備。主要的
Matt 是 FEI 的客戶經理，歡迎來 Semicon West 參觀！Matt 將於星期二下午 2 點到 Indium 攤位參加「Meet The Bloggers」活動，您也可以到 FEI 攤位 (2141 South Hall) 參觀設備。如需更多資訊，請聯絡他 [email protected].
