电镀铟需要多长时间？

At times, I get questions like, “How long does it take to deposit 20 µm of Indium on my plate using your Indium Sulfamate Bath?” Well, the answer to this question would make it very easy for the customer. Let me show you how to calculate this with ease. In this post, I will derive a simple and easy relation that will work for anyone. Believe me, it’s easy; just use some fundamental relations that we studied in high school. It starts with how many electrons you require to reduce an In³⁺ ion to an In atom – 3, right!

那么，收费是多少 - 3e！

The time it takes directly depends upon how much charge we’ve got to supply to reduce all those Indium ions, and at what time rate we can supply those – that is “current”!

If you’ve heard of this famous current-charge relation, i =q/t, yes, that is what I am talking about.

所以，还是回到最基本的话题吧、

If the cathode (where the indium is electrodeposited) is not 100%efficient, it will take a little longer. Let’s say, σ be the efficiency. Then it will take, 1/σtimes longer. For example, if it is50% efficient, it will take, 1/0.5 = 2times longer. So, incorporating efficiency, the equation for time becomes:

将所有这些值输入上面的等式，就得到了：

Okay, so the answer is, the estimated time to deposit 20µm is 34 minutes, and you know what factors can change this.

And here’s an easy formula to calculate time in minutes for the most widely used units of thickness and current density:

好吧，为什么不把这个数字称为30.676"希塔尔模板常数 "呢？

Indium Sulfamate Bath from Indium Corporation has a cathodic efficiency of 90%. More efficiency means less time! The typical current density to work on is around 10-20mA/cm²but it can be increased up to100 mA/cm², maintaining the bath temperature at 20-25°C. Increasing the current density from 20mA/cm²to100 mA/cm²can reduce the deposition time by a factor of 5, i.e. the same 20µm will now deposit in 7 minutes.

The extensive use of indium plating today dates back to the 1930s when the founders of Indium Corporation developed a commercial indium plating bath for the first time. Recent developments in semiconductor technology and flip-chip bonding utilize indium to create interconnects between layers of wafers. Indium is electroplated onto wafer substrates to create high-density, low-pitch and high-aspect ratio indium bumps. The softness, ductility and wettability of indium ensure a strong and reliable connection between two surfaces, even if they are not perfectly flat or aligned. Furthermore, Indium exhibits stability even at temperatures approaching zero, making it highly suitable for use in semiconductor applications that operate in extreme environments, such as those encountered in space.

如果您想进行小规模电镀项目，包括用铟镀层修复古董金属物品，您可以从这里提供的这种健康易用的电镀套件开始。

请参阅以下文件，了解有关铟电镀、氨基磺酸铟镀液和铟凸点电镀的更多信息。

1. 利用氨基磺酸铟电镀液实现更精细的晶粒结构
2. Indium Bump Electroplating
3. 电镀，涂铟的另一种方法
4. 镀铟的正确表面处理方法
5. 使用氨基磺酸铟电镀液进行原型电镀
6. 回收和处理氨基磺酸铟电镀液

For any other inquiries, please contact me.